Inte Surface Application As Template For Indium Deposited Nanosystem Formation

Formation of indium deposited coverage on (001) surface of InTe layered semiconductor crystal due to solid state dewetting process was studied by STM/STS in UHV. The initial surface was characterized by XPS, LEED and AFM. InTe has tetragonal crystal structure of the TlSe type (I4/mcm space group, lattice parameters a = 8.4414(6) angstrom, c = 7.1333(5) angstrom) determined by XRD. STM/STS show that the shape and arrangement 0 D indium induced nanostructures are powered by square surface lattice symmetry. The STS reveal correlation between indium coverage kinetics and increase in the quantity of DOS within the band gap of InTe.