An Ultrafast Quasi-Non-Volatile Semi-Floating Gate Memory with Low-Power Optoelectronic Memory Application

Semi-floating gate (SFG) memory based on 2D materials shows ultrahigh-speed operations and fills the huge gap between volatile memory and nonvolatile memory technology in time scale. In this study, a SFG FET with a programmable rectification mode based on the 2D WS2 is achieved. The innovative use of the quasi-non-volatile programmable p-n junction photovoltaic effect successfully provides an ultra-low power consumption photovoltaic quasi-non-volatile memory. The device exhibits a switching ratio of more than 10(7) at constant drain-source voltage V-ds = +/- 5 V. In the p-n junction mode, after removing the gate voltage for 1 h, the rectification ratio of the device is 10(5). Combined with ultra-fast operation speed, which can provide perspectives on possible directions of the next generation for low-power high-speed semi-floating gate FET applications.