Design Of A High-Power Multilevel Sinusoidal Signal And High-Frequency Excitation Module Based On Fpga For Hifu Systems

High-intensity focused ultrasound (HIFU) is a noninvasive therapy that uses focused ultrasound to treat a part of the tissue; high temperatures can damage tissues by heat. HIFU has many applications in the field of surgery and aesthetics and is used increasingly in everyday life. In this article, we discuss the mainboard design that controls the HIFU system with the ability to create a multistep sine wave compatible with many different applications. The signal used to trigger the transducer is a sinusoidal signal with a frequency adjustable from 0.1 to 3 MHz. In addition, the power supplied to the HIFU transducer is also controlled easily by the configuration parameters installed in the control circuit board. The proposed control and design method generates a voltage signal that doubles the supply voltage, thereby reducing the current on the MOSFET. The hardware design is optimized for a surface-mounted device-type MOSFET without the need for an external heat sink. In tests, we conducted a harmonious combination of two output signals to activate the same HIFU probe. The results showed that the energy transferred to the HIFU transducer increased by 1.5 times compared to a single channel. This means that the HIFU treatment time is reduced when using this method, with absolutely no changes in the system structure.