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Investigation Of The Anomalous Effect Of The Ac-Signal Frequency On Flat-Band Voltage Of Al/Hfo2/Sio2/Si Structures

Andrzej Mazurak,Bogdan Majkusiak

SOLID-STATE ELECTRONICS（2021）

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Abstract
MIS structures with double-layer HfO2/SiO2 gate stacks were fabricated. The admittance measurements revealed an anomalous voltage shift of the capacitance-voltage characteristics, modulated by the ac signal frequency. The effect is discussed in terms of the oxide charge modulation through the frequency dependent leakage mechanism.
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Key words
MIS, High-k, C-V, Admittance, Tunneling, Characterization
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