High Stable Exciton Emission From Sno2 Quantum Dots Grown Via A Facile "Top-Down" Strategy

PIERS 2014 GUANGZHOU: PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM(2014)

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摘要
SnO2 is a promising wide band gap semiconductor for next generation ultraviolet (UV) non-polar optoelectronic devices applications. The development of SnO2-based optoelectronic devices is obsessed by its low exciton emission efficiency. In this study, quantum confined SnO2 nanocrystals have been facilely fabricated via pulsed laser ablation in liquid. The intensity of exciton emission from SnO2 quantum dots (QDs) was stable for at least two years. The SnO2 QDs possess high thermal stable exciton emission at 300nm in water. Therefore, we have shown that SnO2 QDs can be a potential luminescent material suitable for the realization of ultraviolet B non-polar light emitting devices and lasing devices.
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