Parameter Variation Analysis of Dopingless and Junctionless Nanotube MOSFET

In this paper, dopingless nanotube MOSFET (DL-NT MOSFET) has been designed for low power circuit applications. Performance parameters of proposed device are extracted and compared with junctionless nanotube (JL-NT MOSFET). DL-NT MOSFET has low ON current and less sensitivity towards the various device design parameter variation than heavily doped JL-NT MOSFET. It has also been observed that Subthreshold slope (SS), DIBL, I-ON,and I-OFF current of DL-NT MOSFET has shown least sensitivity on gate length variation as compared to JL-NT MOSFET. Sensitivity towards the temperature variations has also been analysed for both the devices. DL-NT MOSFET shows very less changes in SS and DIBL I-ON, and I-OFF current on temperature variation as compared to JL-NT MOSFET. Therefore, DL-NT MOSFET with suitable design parameters and dielectric material may be used for low power digital circuits.