High-Brightness Green Light-Emitting-Diodes

II-VI heterostructures composed of ZnSe/ZnTeSe layers have been employed to develop high-brightness green, light-emitting diodes operating at peak wavelengths in the pure green spectral region (508-514nm). The brightest devices produce 792muW (10 mA, 4V) peaked at 510nm. This corresponds to an external efficiency of 2% and a luminous performance of 8.0 lumen/W.