A 1 Mgy Tid Radiation-Tolerant 56 Mu W Cmos Temperature Sensor With +/- 1.7 Degrees C Accuracy

The total-ionizing-dose (TID) radiation tolerance of CMOS temperature sensors is generally limited by the radiation-introduced leakage current in diodes. A dynamic base leakage compensation technique is employed to improve the radiation hardness of the CMOS temperature sensor. The fabricated temperature sensor achieves an accuracy of +/- 1.7 degrees C from -40 degrees C to 125 degrees C, while the power and area consumption are only 56 mu W and 0.07 mm(2), respectively. The temperature sensor is assessed with a gamma irradiation experiment with a dose rate of 1 kGy/h, and radiation induced temperature readout drifts are smaller than 0.2% after 1 MGy.