A New Design Of Thin Film Transistors With Heat-Retaining Enhanced Crystallization (H-Rec) Method

For the development of a high performance poly-silicon crystallization method, Heat-Retaining Enhanced Crystallization is introduced. By applying a heat retaining capping layer on the pre-patterned amorphous silicon island, a 14 mu m fully lateral grown poly-silicon active layer was obtained through single shot laser irradiation. The transient reflectance analysis of the H-REC sample demonstrated an 1100ns melt duration, which was 7.3 magnitudes larger than that achieved via excimer crystallization. A single grain boundary HREC TFT was successfully fabricated with a field effect mobility of 359 cm(2)/Vs.