Sio2-Metal Cantilever Structures Under Thermal And Intrinsic Stress
2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2（2011）
摘要
The mechanical behavior of multi-layered cantilever structures made of SiO2 coated with thin metal films (chromium and gold) is investigated considering the intrinsic and thermal stress. Experimental measurements and numerical simulations were performed to analyze the influence of residual stress components on such cantilever structures.
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关键词
cantilever, silicon oxide, intrinsic stress, thermal stress, WLI characterization, FEM simulation
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