Growth of silicon- and carbon-doped GaAs by chemical beam epitaxy using H2-diluted DTBSi and CBr4 precursors
Journal of Crystal Growth（2021）
Abstract
•Controlled n- and p-type doping in GaAs using H2 diluted gaseous precursors.•Demonstration of Si doping in GaAs by chemical beam epitaxy using DTBSi.•Controllable p-type doping levels in GaAs (down to 1×1017 cm−3) using CBr4.•Elucidation of the incorporation laws of Si and C into GaAs.
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Key words
A1. Doping,A3. Chemical beam epitaxy,B1. Inorganic compounds,B2. Semiconducting III-V materials,B2. Semiconducting gallium arsenide
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