Donor Ionization Tuning In Algaas/Ingaas/Gaas Phemt Quantum Wells With Alas Nanolayers In Spacer

A comparison of the electron transport properties of pseudomorphic quantum well A(x)Ga(1-x)As/In0.2Ga0.8As/GaAs with those of conventional donor layer (x=0.15 and x=0.25) and with AlAs nanoinserts around the delta-Si layer or AlAs: delta-Si donor layer is presented. The structures with added AlAs layers exhibit electron concentration decrease, combined with increased electron mobility. This effect is related to the suppression of remote ionized impurity electron scattering, change of band structure and decreasing efficiency of silicon atoms doping when incorporating in pure AlAs.