A 0.35-Mu M Sigebicmos Rf Front-End Ic For Td-Scdma Receiver

A TD-SCDMA RF front-end receiver IC, which is fabricated in a 0.35- mu m SiGe BiCMOS technology, is presented in this paper. This IC contains two blocks, low-noise amplifier (LNA) and mixer, and operates at 2.7-V supply voltage with a current consumption of 14.7 mA. The measured NF and power gain of the IC are 2.7 dB and 31 dB, respectively. It is shown that RF front-end circuit which is implemented in SiGe BiCMOS process has more advantages than CMOS circuits, like power comsumption and NF performance.