Development Of High-K Dielectric For Antimonides And A Sub 350 Degrees C Iii-V Pmosfet Outperforming Germanium

InxGa1-xSb channel materials have the highest hole and electron mobility among all III-V semiconductors, high conduction and valence band offsets (CBO/VBO) with lattice matched AlxIn1-xSb for heterostructure MOSFET design [1] and allow low thermal budget MOSFET fabrication (Figure 1). While buried channel HEMT-like devices with excellent electron and hole transport [3-5] have been demonstrated, realization of an Sb-channel MOSFET has remained elusive due to the highly reactive nature of the Sb-surface (Figure 2). In this paper we overcome these challenges (Figure 1) and fabricate an InxGa1-xSb pMOSFET with high hole mobility (mu(h)) : a bottleneck for III-V complimentary logic. Synchrotron Radiation Photoemission Spectroscopy (SRPES) is used to aid the development of ALD Al2O3 on GaSb with a mid bandgap Dit of 3x10(11)/cm(2)eV(-1). A p(+)/n diode with ideality factor of 1.4 and I-ON/I-OFF > 5x10(4) is developed. pMOSFETs with various channel configurations to optimize the hole transport are fabricated using a sub 350 degrees C gate-first process. Surface (buried) channel pMOSFETs with peak mu(h) of 620 (910) cm(2)/Vs and having more than 50 (100) % higher mobility than Germanium over the entire sheet charge (N-s) range are demonstrated and analyzed.