Negative Capacitance FETs with Steep Switching by Ferroelectric Hf-based Oxide

M. H. Lee,P. -G. Chen,S. -T. Fan,C. -Y. Kuo,H. -H. Chen,S. -S. Gu,Y. -C. Chou,C. -H. Tang,R. -C. Hong,Z. -Y. Wang,M. -H. Liao,K. -S. Li, M. -C. Chen,C. W. Liu

2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)（2017）

Cited 28|Views0

Key words

steep switching,ferroelectric hafnium-based oxide,FE-HZO negative capacitance FET,FE-HZO NC FET,annealing,subthreshold swing,FE-HZO thickness,NC-FinFET modeling,polarization hafnium-based oxide,temperature 800 degC,size 14 nm,HfZrOx

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