High Performance PMOS with Strained High-Ge-content SiGe Fins for Advanced Logic Applications

Pouya Hashemi,Takashi Ando,Karthik Balakrishnan,Siyuranga Koswatta,Kam-Leung Lee,John A. Ott,Kevin Chan,John Bruley,Sebastian U. Engelmann,Vijay Narayanan,Effendi Leobandung,Renee T. Mo

2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)（2017）

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high performance PMOS,strained high-Ge-content SiGe fins,advanced logic applications,strained-SiGe channel,uniaxial strain,mobility,reliability,HGC SiGe,thermal budget constraints,RMG flows,gate first flows,replacement HK-MG flows,short-channel performance,FDSOI generations,advanced FinFET,SiGe

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