Characterization Of The Two-Dimensional Electron Gas In Alxgax-1n/Gan Heterostructures With Two Subbands Occupied

Zw Zheng,B Shen,Cp Jiang,R Zhang, Y Shi,Yd Zheng, Sl Guo,Gz Zheng, Jh Chu

SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS（2001）

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摘要

Magnetotransport properties of the two-dimensional electron gas (2DEG) in AlxGa1-xN/GaN heterostructures have been investigated. We extrapolate that the second subband in the triangular quantum well at the heterointerface starts to be populated at the 2DEG concentration of about 7.23 X 10(12) cm(-2). The quantum scattering time related to the first subband is obtained to be 0.144-0.146 ps for the heterostructures. The intersubband scattering is also observed in the heterostructures.

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关键词

III-V semiconductors,Shubnikov-de Haas effect,aluminium compounds,gallium compounds,interface states,semiconductor quantum wells,two-dimensional electron gas,wide band gap semiconductors,0.144 to 0.146 ps,2DEG characterization,2DEG concentration,Al0.22Ga0.78N-GaN,AlxGa1-xN/GaN heterostructures,Dingle plots,Shubnikov-de Haas oscillations,Van der Pauw Hall measurements,diagonal magnetoresistivity,first subband,heterointerface,intersubband scattering,magnetotransport properties,occupied subbands,quantum scattering time,second subband,triangular quantum well,two-dimensional electron gas,

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