Effects Of Growth Temperature On Electrocatalytic Properties Of Three-Dimensional Sulfur-Doped Graphene Foam

Three-dimensional sulfur-doped graphene (3DSG) has been grown by chemical vapor deposition (CVD) using nickel foam as substrate and thianthrene as the solid carbon and sulfur source. The results show that the growth temperature of 3DSG has significant influence on the electrocatalytic activity for hydrogen evolution reaction (HER). The 3DSG sample under optimal growth temperature of 800 degrees C has the best electrocatalytic activity. The excellent electrocatalytic activity can be attributed to its well-designed porous, conductive and 3D sulfur-doped graphene structure.