Electron Beam Mask Writer Ebm-8000p For High-Throughput Mask Production

The high-throughput EBM-mask writer, EBM-8000P has been developed for mature node mask market. The EBM-8000P inherits basic architectures from the previous EBM-8000 system, i.e. electron optics with 50kV acceleration voltage, 400A/cm(2) current density, variable shaped beam (VSB), and also, user interface such as JOB control system, mask handling system, which are equivalent to our latest single electron beam mask writers.The EBM-8000P has two models, the EBM-8000P/H, which is equivalent to the conventional EBM-8000, and the EBM-8000P/M, which aims for high throughput.The mask-writing throughput depends largely on the beam shot size and the current density, based on the generation of mask nodes. The EBM-8000P/M achieves high throughput and enough accuracy for 45-20 node by enlarging the maximum shot size while maintaining a current density of 400A/cm(2).Therefore, it is possible to achieve throughput that is 1.5 to 2 times faster than the conventional 70A/cm(2) mask writer (such as EBM-6000) which is for 45-20nm node.