Composition And Structure Analyses On Spontaneously - Formed Algaas Superlattice-Like Structures On (100) Gaas

AlxGa1-x As superlattice-like structures are spontaneously formed during the nominally homogeneous epitaxial layer growth on 2 degrees off (100) GaAs substrate by the metalorganic chemical vapor deposition. The structures are observed in the range of nominal Al gas composition range of x(g), = 0.1 similar to 0.3. The solid composition x(g) values constituting the well are shown to be constant similar to 0.035 regardless of the x, value. Meanwhile the barrier composition increases with x(g) and exhibits the maximum value at x(g) = 0.25. The well width decreases with increasing growth temperature Tg and increasing x(g), and the barrier width increases with Tg. The period is almost independent of Tg and increases with decreasing x(g).