Enhancement-Mode Gan Hemt Power Electronic Device with Low Specific on Resistance
2017 14TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING (SSLCHINA) INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS (IFWS)（2017）
关键词
Gallium Nitride High Electronic Mobility Transistor,power electronic device,enhancement mode,p-type GaN
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