Influence Of Photon Energy On Conductivity Of Photoconductive Semiconductor Switches Fabricated From Semi-Insulating Gap

The article presents the experimental results of research works aimed at manufacturing photoconductive semiconductor switches (PCSSs) on semi-insulating (SI) gallium phosphide (GaP) wafers. The PCSS is an electrical switch, triggered into the conduction state by means of an optical pulse with specific photon energy. The switches presented in the paper are developed for the applications in power systems and high-pulse voltage generators. The paper presents time courses of the photocurrent being a response to the excitation of semiconductor material with an optical pulse that generates excess charge carriers. The effects of laser beam photon energy on the height and time constant of photocurrent pulses were determined. The results of measurements of photocurrent in the conduction state for various values of electric field strength are presented. The research methodology was discussed and the measuring system used was described. Possible directions of further research were also presented. The research was carried out thanks to the cooperation of scientific teams from the Military University of Technology (WAT) and the Institute of Electronic Materials Technology (ITME).