Study On Built-In Electric Field And Nonlinear Optical Properties In Inxga1-Xn/Gan Single Quantum Well Under The Presence Of External Applied Field

The hexagonal single quantum well fabricated using the nitride semiconductor heterostructures GaN/InGaN/GaN contains a built-in electric field as a result of lattice strain in this wurtzite structure. By analytic Airy function approach the eigenstates of the quantum well (QW) are obtained under applied electric field. In this paper we report a study on spontaneous and piezoelectric polarization in GaN/InGaN/GaN QW. The analytical expression for third order optical nonlinearities are evaluated by using density matrix approach. We observed that the third-order nonlinearties are blue shifted since intersub and energy spacing increase with increasing applied field strength. The results also showed that both the strong built-in field and external applied electric field have great influence on the optical properties.