Low-Temperature Process Compatibility for the Oxide Thin Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition at 150°C
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)（2019）
关键词
low-temperature process compatibility,post-annealing process temperature,oxide thin film transistors,active channels,atomic-layer deposition,temperature 150.0 degC,temperature 60.0 degC,voltage -3.5 V,voltage -2.3 V,In-Ga-Zn-O
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