High Performance (001) Beta-Ga2o3 Schottky Barrier Diode

A schottky barrier diode (SBD) without field plate was fabricated on a Si-doped N-Ga2O3 drift layer, which was grown by halide vapor phase epitaxy (HVPE) on a heavily Sn-doped (001) beta-Ga2O3 substrate. The thickness and concentration of N-drift layer were 5 mu m and 3.8x10(16) cm(-3), respectively. The reverse breakdown voltage (BV) and specific on-resistance (R-on) of the fabricated Ga2O3 SBD were 825 V and 3.5 m Omega.cm(2), respectively, leading to a high Baliga figure-of-merit (BV2/R-on) of 194.5 MW.cm(-2). Besides, a high current on/off ratio of 4.2x10(10) was obtained.