Improved Quantum Efficiency In Algainsb/Inas Superlattices For Mid-Infrared Optoelectronics
2018 IEEE RESEARCH AND APPLICATIONS OF PHOTONICS IN DEFENSE CONFERENCE (RAPID)(2018)
Abstract
Several mid-infrared superlattice and emitter regions, including new combinations, and have been designed and grown by molecular beam epitaxy. An ultrafast technique has been refined with CW measurements to obtain A, B, C recombination coefficients and emitter quantum efficiency. Promising results on AlGaInSb/InAs superlattices are presented, in addition to other material combinations.
MoreTranslated text
Key words
superlattice, ultrafast carrier dynamics, molecular beam epitaxy, mid-infrared
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined