0.9 Mu M Pitch Pixel Cmos Image Sensor Design Methodology
2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING(2009)
摘要
We demonstrate the first ever 0.91 mu m pitch pixel CMOS image sensor(CIS), and reveal the problems that are likely to be encountered in future device structures. We have developed a set of guidelines for the design of high quantum efficiency(QE) CISs, and verified their validity by comparing the image quality of 0.9, 1.12, 1.4 and 1.75 mu m CISs. Furthermore, we propose a simple methodology to optimize more complicated submicron pitch CIS structures.
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