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Atomic Layer Deposition of Hafnium Oxide on InAs: Insight from Time-Resolved in Situ Studies

Giulio D'Acunto,Andrea Troian,Esko Kokkonen,Foqia Rehman,Yen-Po Liu,Sofie Yngman,Zhihua Yong,Sarah R. McKibbin,Tamires Gallo,Erik Lind,Joachim Schnadt,Rainer Timm

ACS APPLIED ELECTRONIC MATERIALS（2020）

Cited 29|Views27
Key words
atomic layer deposition,HfO2,TDMA-Hf,InAs,self-cleaning,ligand exchange,ambient pressure XPS
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