0.6 Mu M Pitch Highly Reliable Multilevel Interconnection Using Hydrogen Silicate Based Inorganic Sog For Sub-Quarter Micron Cmos Technology

A 0.6 mu m pitch highly reliable multilevel interconnection technology using low-k Hydrogen Silicate Based inorganic Spin- on Glass (HSI-SOG) is demonstrated for 0.15 mu m CMOS devices. A stable HSI-SOG interlayer dielectric (ILD) with low leakage current is realized in the metallization process with above 400 degrees C. The reliability of wiring and. MOSFET is superior to that of the conventional high-density plasma CVD SiO2 (HDP SiO2) ILD. A new via formation process using an NH3 plasma treatment achieves low via resistance of 4 Omega at 0.28 mu m in diameter. in addition, the device performance is also improved by the 25 % reduction in wiring capacitance.