The Integration Of Ga2o3 On Sic At Room Temperature By Surface Activated Bonding Method

The integration of Ga2O3 on SiC is a promising method to reduce the self-heating of Ga2O3-based devices. The bonding with an average bonding energy of similar to 2.31 J/m(2) was achieved by surface activated bonding (SAB) using a Si-containing Ar ion beam at room temperature. The high-resolution STEM analysis was carried out to investigate the bonding mechanism. The analysis indicate a similar to 2.2 nm amorphous SiC layer and similar to 1.8 nm amorphous Ga2O3 layer with a slight diffusion at the interface, which should contributes the strong bonding. Same analyses were applied on the 473 K-annealed bonding interface and indicate that the interfacial layer shrank by similar to 0.5 nm after annealing, which may due to the further diffusion of Ga and Si.