Thermal Decomposition Of Ethylene On Si(111): Formation Of The Si(111)Root 3 X Root 3: Carbon Structure

Adsorption and thermal decomposition of ethylene on Si(111) have been studied by photoelectron spectroscopy. The evolution of the C 1s and Si 2p core-levels upon the adsorption of the ethylene and the formation of C-incorporated surfaces by thermal annealing is analyzed, from which the unique chemical and structural properties of root 3 x root 3 reconstructed phase can be derived. We also discuss the coverage of the C atoms involved and their position on the root 3 x root 3 surface in terms of a structure model. (c) 2006 Elsevier B.V. All rights reserved.