Demonstration Of Uniform And Reliable Gan P-I-P-I-N Separate-Absorption And Multiplication Ultraviolet Avalanche Photodiode Arrays With Large Detection Area

Front-illuminated GaN p-i-p-i-n separate-absorption and multiplication avalanche photodiode (SAM-APD) epitaxial structures were grown by metalorganic chemical vapor deposition (MOCVD) on n-type bulk GaN substrates and fabricated into 4x4 arrays with a large detection area of 100x100 mu m(2). The SAM-APD array showed a uniform distribution of dark current density of J(Dark)<(5.1 +/- 0.8)x10(-8) A/cm(2) at reverse bias (V-R) of 44 V except for two of them. In addition, the average onset points of breakdown voltages (V-BR) of the SAM-APD array was 73.1 +/- 0.21 V, and no microplasmas were visually observed after multiple times I-V scans.