Effects of the Temperature on the Efficiency Degradation in Multi-stage RF Energy Harvesters
2019 PHOTONICS & ELECTROMAGNETICS RESEARCH SYMPOSIUM - SPRING (PIERS-SPRING)(2019)
Abstract
The conversion efficiency of a multi-stage RF energy harvester on a printed circuit board charge-pump, based on off-the-shelf diodes and capacitors is studied, in the UHF band, as a function of temperature. The considered temperature range varies from 25°C to 85°C, highlighting that the effects of the temperature may cause a severe degradation on the harvested power, in particular at the lowers incident power regimes. Experimental measurements are presented to show that the rectifiers quality has the biggest impact of the harvester performances. Precisely, the temperature dependent rectification ratio of silicon Schottky diodes commonly used for this application can be considered as a quality factor of the converter.
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Key words
converter quality factor,silicon Schottky diodes,rectifier quality,UHF band,capacitors,off-the-shelf diodes,temperature effect,harvester performances,considered temperature range varies,printed circuit board charge-pump,conversion efficiency,multistage RF energy harvester,efficiency degradation,temperature dependent rectification ratio,temperature 25.0 degC to 85.0 degC
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