Effect Of Deposition Oxygen Pressure On The Properties Of Cuprous Oxide Thin Films

This study presents the effect of the oxygen pressure during deposition on the properties of cuprous oxide (Cu2O) thin films. The Cu2O is a p-type semiconductor material with a cubic crystallinity structure that has potential applications in solar cells, photo catalysis, gas sensing, superconductor, hydrogen production and thermoelectric generators. Different thicknesses of Cu2O films and different surface parameters are obtained if the oxygen pressure is modified during the depositions process. The samples were characterized by atomic force microscopy technique (AFM) and the results clearly demonstrate that Cu2O thin films properties are improved if the oxygen pressure during deposition decreases. The thickness of films and the surface parameters were measured using the AFM non-contact mode. The thickness and the surfaces roughness increase if the oxygen pressure during deposition decreases. This effect is based on obtaining higher particle sizes at low pressures. The modulus of elasticity and the hardness dependence on the deposition oxygen pressure is monitored by nanoindentation using a diamond Berkovich tip. The materials mechanical properties increase significantly if the oxygen pressure during deposition decreases, respectively. The results are useful to micro and nano-systems designers to fabricate reliable structures based on Cu2O thin films.