Goos-Hanchen Shifts At The Anisotropic Two-Dimensional Atomic Crystals Interface

In this paper, we study the Goos-Hanchen effect at the interface of anisotropic two-dimensional atomic crystal. This optical effect manifests itself as a in-plane shift. The relationship between the in-plane shift and optical axis direction, conductance, and doping concentration of the two-dimensional atomic crystal was established. Furthermore, the study found that the in-plane shifts at the black phosphorus interface are sensitive to relative to the change of the optical axis angle, doping concentration and frequency. The precise measurement of the parameters through quantum weak measurement technology provides important theoretical guidance for the experimental characterization of two-dimensional atomic crystals.