Challenges Facing Gan-Based Electronic Devices

Gd Via, A Crespo,G Desalvo,T Jenkins, J King,J Sewell

COMPOUND SEMICONDUCTOR POWER TRANSISTORS II AND STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXXII)（2000）

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Abstract

Nitride-based electronic devices are aggressively being developed. The theoretical potential of this technology is currently being demonstrated. However, there are still issues to be addressed before III-nitride electronics move beyond laboratory demonstrations to an applied device technology. This paper presents work addressing some of those issues under investigation at AFRL.

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