Two Photon Induced Photoconductivity In Hg1-Xcdxte

Xz Yuan, W Lu, J Jiang,Gs Xu,Sc Shen,Mk Wang,Xp Yang, G Wu,Yg Li

PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS(2001)

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摘要
The Beijing free electron laser(BFEL) has been used for the first time to study the nonlinear photoconductivity characteristics of the infrared photoelectronic material Hg1-xCdxTe. Taking advantage of the high photon flux density of BFEL, we have investigated the photoconductivity characteristics of Hg1-xCdxTe induced by two photon absorption observed the photoconductivity signals saturation, and studied the two photon photoconductivity characteristics on different bias across the sample.
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关键词
free electron laser, two photon absorption, photoconductivit
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