Mbe-Grown Hg1-Xmgxte Layers: Characterization By X-Ray Diffraction And Raman Spectroscopy

PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS(2001)

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摘要
Hg1-xMgxTe layers (with the crystal composition range of 0less than or equal tox<0.8) were grown by MBE techniques on (001)Cd0.97Zn0.03Te substrates following a thin CdTe buffer. High-resolution X-ray diffraction measurements and Raman scattering measurements were used to characterize selected structure and optical properties of these mixed crystals. The two-mode optical phonon behavior of the alloy was confirmed. The frequencies of the optical modes of zinc blende MgTe as well as the frequencies of the Mg local mode in HgTe and Hg gap mode in MgTe were estimated.
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关键词
mercury chalcogenides, MBE growth, X-ray diffraction, Raman scattering, local modes, optical phonons
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