High Power Al-Free Ingaasp Quantum Well Laser Diodes Of 808nm Wavelength

Peixu Li, Kai Jiang,Xin Zhang,Qingmin Tang,Wei Xia,Shuqiang Li,Zhongxiang Ren,Xiangang Xu

PROCEEDINGS OF CHINA DISPLAY/ASIA DISPLAY 2011（2011）

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摘要

In this paper, we present a high power laser diode of 808nm wavelength with Al-free InGaAsP quantum well. For high power and narrow beam divergence, an asymmetry broad waveguide structure was used. The epilayers were grown by LP-MOCVD. We have obtained a maximum optical power of 11.6W at 10A and the vertical far field angle of 29 degrees. After lifetime tested, Al-free InGaAsP quantum well laser diodes showed good reliability.

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asymmetry broad waveguide, InGaAsP Al-free quantum well, LP-MOCVD

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