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A Novel Method Of Low Contact Resistance Treatment In Solution Metal Oxide Tft Fabrication

Kuo-Hui Su,Chin-Chih Yu, Yu-Chien Lai, Chia-Yi Chien,Liang-Yu Lin, J. P. Tseng,Fan-Wei Chang

IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3（2010）

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Abstract
In our research, IZO (In2O3-ZnO) prepared by sol-gel method was applied to thin film transistor (TFT) fabrication as the active layer. To protect channel region in etching process and improve the contact interface between metal oxide semiconductor and S/D metal simultaneously, we introduced a halftone method to IZO TFT device.
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