Enlargement Of Polycrystalline Si Grain On Polycarbonate Substrate Prepared By Conventional Laser Annealing

Naoya Kawamoto,Tetsuya Imamura,Yuka Tomizawa,Kazuyuki Tadatomo

IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3（2010）

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摘要

In this paper, we discuss the crystal growth mechanism of polycrystalline Si grain by conventional laser annealing on polycarbonate substrate. We show the polycrystalline Si grain of diameter with over 150 nm by conventional laser annealing on polycarbonate substrate.

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