Effect of electron beam irradiation on structural and electrical properties of graphene-SiO 2 -Si structures

Investigation of the structure of graphene layers onto silicon dioxide and its relations with carriers transport mechanism is reported. It has been shown that CVD graphene has granular structure. Potential barriers at the grain boundaries hinder the transport of carriers. Experimental result shows, that electron beam irradiation leads to injection of extra charges into silicon dioxide layer, creating new centers of scattering. It has been found, that conductivity of CVD graphene onto silicon dioxide substrate has not linear character in RF range.