Growth And Characterization Of Ingan For Photovoltaic Devices

In this work we present the growth and characterization of InxGa1-xN-based materials and solar cells with x up to 0.39. The bandgap of the layers is determined by contactless electroreflectance, which indicates a substantial Stokes shift compared to photoluminescence measurements. Time-resolved photo-luminescence was used to confirm the existence of carrier localization phenomenon in the films. Fabricated p-n devices are then studied for photo-response under simulated AM0 spectral conditions and under wavelength-dependent conditions to evaluate solar cell characteristics. All of the p-n junctions exhibited photoresponse in the regions above their respective bandgaps. However, the dark and illuminated J-V results indicate the existence of significant shunt and series resistances arising from material defects and non-optimized device designs. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim