Development Of A New Silicon Drift Detector Module

X-RAY ABSORPTION FINE STRUCTURE-XAFS13(2007)

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摘要
A novel 7 cell Silicon Drift Detector (SDD) module for X-Ray Absorption Fine Structure Spectroscopy (XAFS) and similar methods is developed at the Hamburger Synchrotron Strahlungslabor at Deutsches Elektronen Synchrotron. The monolithic 7 cell SDD detector chips were delivered by PN Sensors (Munich, Germany). Each cell has an active area of 7 mm(2). In this paper we report results from the spatially resolved spectroscopic characterization of the SDD and their consequences for the final design of the complete detector modules. A specialized read out chip is currently developed at DESY and will make it possible to achieve a maximum count rate of 600 Kcps/detector cell.
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关键词
silicon drift diodes,fl-XAFS,detector development
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