Ultrahigh-Sensitive and CMOS Compatible ISFET Developed in BEOL of Industrial UTBB FDSOI
2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGY(2018)
关键词
BEOL,ion-sensitive field-effect transistors,ultrahigh-sensitive CMOS compatible ISFET,industrial UTBB FDSOI transistors,Nernst limit,capacitive divider circuit,reference electrode elimination,IoT,integrated pH sensor,Si
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