Uv Enhanced Field Emission For Beta-Ga2o3 Nanowires

This letter presents vapor-liquid-solid growth of beta-Ga2O3 nanowires (NWs) on cost-effective SiO2/Si template and the fabrication of beta-Ga2O3 NW field emitters. It is found that the beta-Ga2O3 NWs grown at 950 degrees C are structurally uniform, defect free, and well-oriented with pure monoclinic structure. It is also found that turnon fields are 2.0, 3.9, and 5.8 V/mu m whereas field-enhancement factors beta are 1890, 2760, and 4489, for the samples grown at 850 degrees C, 900 degrees C, and 950 degrees C, respectively. For the sample prepared at 950 degrees C, it is found that we could further reduce the turnon field from 2 to 1.2 V/mu m whereas enhance the field-enhancement factor beta from 4489 to 6926 by ultraviolet irradiation.