Building The Quasi One Dimensional Transistor From 2d Materials

2019 IEEE 2ND UKRAINE CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (UKRCON-2019)(2019)

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摘要
Here we describe some preliminary device results from field effect transistors made from metal trichalcogenides. Although not much investigated, is both promise and room for improvement. Improvements could come from better contacts and lower semiconductor channel defect densities, in metal trichalcogenides transistors. Devices with ohmic contacts have now been fabricated, and the surface termination of these materials modeled by density functional theory.
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关键词
novel materials for beyond CMOS,quasi one dimensional semiconductors,TiS3,In4Se3
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