Investigation Of Electronic Properties Of Moxw1-Xs2 Alloy By Tight-Binding Method For Interband Transition

2019 19TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD 2019)(2019)

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摘要
Two dimensional (2D) materials have been popular recently due to their low-dimensional transport properties. And transition metal dichalcogenides (TMDCs) show a wide range of electronic and optical properties. In this paper, the electronic and optical properties of MoxW1-xS2 alloy such as band structure, bandgap, effective mass and absorption coefficient are modeled sp(3)d(5) by tight-binding model.
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关键词
sp(3)d(5) tight-binding model, TMDCs, Mo(x)W(1-x)S2
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