Combined Effects of Proton Irradiation and Forward Gate-Bias Stress on the Interface Traps in AlGaN/GaN Heterostructure

The combined effects of proton irradiation and forward gate-bias stress on the interface traps of AlGaN/GaN heterostructure have been studied in this article. It is found that the effect of proton irradiation and forward gate-bias on the shift of flat band voltage $V_{\mathrm {FB}}$ is independent. By utilizing the frequency-...