High Current Field Emission Arrays for Crossed-Field Device Experiments

Ranajoy Bhattacharya,Mason Cannon,Rushmita Bhattacharjee,Winston Chern,Nedeljko Karaulac,Girish Rughoobur,Akintunde I. Akinwande,Jim Browning

2021 34th International Vacuum Nanoelectronics Conference (IVNC)（2021）

引用 0|浏览17

暂无评分

摘要

Specially designed silicon gated field emitter array (SiGFEA) tips are used as large current electron sources for crossed-field device experiments. Thirty-six discrete field emitter arrays, each made of 100×100 tips, are integrated in to a single die using a mesh configuration for uniformity and reliability. The I-V characterization shows the devices are capable of producing current up to 5 mA at ...

查看译文

关键词

Field emitter arrays,Ultraviolet sources,Magnetic devices,Voltage,Logic gates,Reliability engineering,Silicon

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要